Bohong sharing --Diamond may become the ultimate semiconductor material

A few days ago, Professor Jiashu, a professor at Saga University in Japan, cooperated with Orbray, a precision parts manufacturer in Japan, to develop a power semiconductor made of diamond and operate at a power of 875 megawatts (875,000 kilowatts) per square centimeter. This power semiconductor has the highest output power value in the world among existing diamond semiconductors. Compared with silicon carbide (SiC) products and gallium nitride (GaN) products, which are next-generation power semiconductors, diamond semiconductors have better performance such as high voltage resistance, and power loss is considered to be reduced to 1/50,000 of silicon products , At the same time, it is also very resistant to heat and radiation, so it is called the ultimate power semiconductor".

The bandgap width of diamond is as high as 5.5eV, which is far higher than that of gallium nitride, silicon carbide and other materials. The carrier mobility is also three times that of silicon materials. The intrinsic carrier concentration is extremely low at room temperature, and it has excellent high temperature resistance properties . The application of diamond in the semiconductor field is becoming more and more extensive. Countries around the world are stepping up the research and development of diamond in the semiconductor field. Among them, Japan has successfully developed an ultra-high-purity 2-inch diamond wafer mass production method, and its storage capacity is equivalent to 1 billion Blu-rays. Optical disc (approximately 25 million TB). The annual output of natural diamonds in the world is about 150 million carats, while the output of synthetic diamonds exceeds 20 billion carats, 95% of which come from mainland China.